Simulation and Design of a Temperature Compensation Circuit for a Radio Frequency Power Amplifier

Abstract

Power amplifiers made with the third-generation semiconductor material GaN (Gallium Nitride) are more suitable for 5G technology. However, the turn-on voltage of GaN power amplifiers decreases with temperature rise and has a large variation, showing a significant quadratic characteristic, which leads to the deterioration of the linearity of the static working current. In order to reduce this linear deterioration, this paper achieves the adjustment of the gate voltage VGS at different temperatures through modeling and simulation in software ADS, MATLAB, and reasonable circuit construction in TINA-TI, maintaining the stability of the static bias current. This method has a wide range of applications in GaN RF power amplifiers.